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data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 1 general description the ap2111 is cmos process low dropout linear regulator with enable function, the regulator delivers a guaranteed 600ma (min) c ontinuous load current. the ap2111 provides 1.2v, 1.5v, 1.8v, 2.5v, 3.3v, 4.8v regulated output and 0.8v to 5v adjustable output, and provides excellent output accuracy 1.5%, it is also provides a excellent load regulation, line regulation and excellent load transient performance due to very fast loop response. the ap2111 has built-in auto discharge function. the ap2111 features low power consumption. the ap2111 is available in soic-8, psop-8 sot-223 and sot-23-5 packages. features ? output voltage accuracy: 1.5% ? output current: 600ma (min) ? foldback short current protection: 50ma ? enable function to turn on/off v out ? low dropout voltage (3.3v): 250mv (typ) @ i out =600ma ? excellent load regulation: 0.2%/a (typ) ? excellent line regulation: 0.02%/v (typ) ? low quiescent current: 55 a (typ) ? low standby current: 0.01 a (typ) ? low output noise: 50 v rms ? psrr: 65db @ f=1khz, 65db @ f=100hz ? otsd protection ? stable with 1.0 f flexible cap: ceramic, tantalum and aluminum electrolytic ? operating temperature range: -40c to 85c ? esd: mm 400v, hbm 4000v applications ? laptop computer ? potable dvd ? lcd monitor figure 1. package types of ap2111 soic-8 psop-8 sot-223 sot-23-5
data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 2 pin configuration figure 2. pin configuration of ap2111 (top view) pin descriptions pin number pin name function soic-8/psop-8 sot-223(h) sot-223(ha) sot-23-5 4 3 2 3 vin input voltage 2 2 3 4 vout output voltage 8 1 en chip enable, h ? normal work, l ? shutdown output 1, 3, 5, 6, 7 1 1 2 gnd ground 5 adj/nc adjust output for adj version/no connected for fixed version m package ( soic-8 ) mp package ( psop-8 ) h/ha package ( so t -223 ) k package (sot-23-5) vin a d j/nc en gnd vout 1 2 34 5 1 2 3 4 8 7 6 5 gnd vout gnd vin en gnd gnd gnd 1 2 3 4 8 7 6 5 gnd vout gnd vin en gnd gnd gnd vin vout gnd 1 2 3 vout vin gnd 1 2 3
data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 3 functional block diagram figure 3. functional block diagram of ap2111 for fixed version uvlo & shutdown logic thermal shutdown v ref gnd en vout vin 3m 1 2 3 4 foldback current limit adj/nc 5 figure 4. functional block diagram of ap2111 for adjustable version a (b) {c} a: soic-8/psop-8 b: sot-223(h) c: sot-223(ha) sot-23-5
data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 4 ordering information ap2111 - package temperature range part number marking id packing type soic-8 -40 to 85 c ap2111m-1.2g1 2111m-1.2g1 tube ap2111m-1.2trg1 2111m-1.2g1 tape & reel ap2111m-1.5g1 2111m-1.5g1 tube ap2111m-1.5trg1 2111m-1.5g1 tape & reel ap2111m-1.8g1 2111m-1.8g1 tube ap2111m-1.8trg1 2111m-1.8g1 tape & reel ap2111m-2.5g1 2111m-2.5g1 tube ap2111m-2.5trg1 2111m-2.5g1 tape & reel ap2111m-3.3g1 2111m-3.3g1 tube ap2111m-3.3trg1 2111m-3.3g1 tape & reel psop-8 -40 to 85 c ap2111mp-1.2g1 2111mp-1.2g1 tube ap2111mp-1.2trg1 2111mp-1.2g1 tape & reel ap2111mp-1.5g1 2111mp-1.5g1 tube ap2111mp-1.5trg1 2111mp-1.5g1 tape & reel ap2111mp-1.8g1 2111mp-1.8g1 tube ap2111mp-1.8trg1 2111mp-1.8g1 tape & reel ap2111mp-2.5g1 2111mp-2.5g1 tube ap2111mp-2.5trg1 2111mp-2.5g1 tape & reel ap2111mp-3.3g1 2111mp-3.3g1 tube ap2111mp-3.3trg1 2111mp-3.3g1 tape & reel sot-223(h) -40 to 85 c ap2111h-1.2trg1 gh11b tape & reel ap2111h-1.5trg1 gh13g tape & reel ap2111h-1.8trg1 gh11g tape & reel ap2111h-2.5trg1 gh11h tape & reel ap2111h-3.3trg1 gh11c tape & reel ap2111h-4.8trg1 gh13d tape & reel package m: soic-8 mp: psop-8 h/ha: sot-223 k: sot-23-5 1.2: fixed output 1.2v 1.5: fixed output 1.5v 1.8: fixed output 1.8v 2.5: fixed output 2.5v 3.3: fixed output 3.3v 4.8: fixed output 4.8v adj: adjustable output circuit type g1: green blank: tube tr: ta p e & reel
data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 5 ordering information (continued) package temperature range part number marking id packing type sot-223(ha) -40 to 85 c ap2111ha-1.2trg1 gh11j tape & reel ap2111ha-1.5trg1 gh14g tape & reel ap2111ha-1.8trg1 gh11k tape & reel ap2111ha-2.5trg1 gh11l tape & reel ap2111ha-3.3trg1 gh11m tape & reel ap2111ha-4.8trg1 gh11n tape & reel sot-23-5 -40 to 85 c ap2111k-1.5trg1 g3s tape & reel ap2111k-adjg1 g3q tube ap2111k-adjtrg1 g3q tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green.
data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 6 absolute maximum ratings (note 1) parameter symbol value unit power supply voltage v in 6.5 v operating junction temperature range t j 150 oc storage temperature range t stg -65 to 150 oc lead temperature (soldering, 10sec) t lead 260 oc thermal resistance (no heatsink) ja soic-8 144 oc/w psop-8 143 sot-223 128 sot-23-5 250 esd (machine model) 400 v esd (human body model) 4000 v note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. recommended operating conditions parameter symbol min typ max unit supply voltage v in 2.5 6.0 v operating ambient temperature range t a -40 85 c
data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 7 electrical characteristics ap2111-1.2 electrical ch aracteristic (note 2) v in =2.5v, c in =1.0 f (ceramic), c out =1.0 f (ceramic), typical t a =25c, bold typeface applies over -40c t a 85c ranges, unless otherwis e specified (note 3). note 2: to prevent the short circuit current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25c. over temperature specificatio ns guaranteed by design only. parameter symbol condi tions min typ max unit output voltage v out v in =2.5v, 1ma i out 30ma v out 98.5% 1.2 v out 101.5% v maximum output current i out(max) v in =2.5v, v out =1.182v to 1.218v 600 ma load regulation (v out /v out ) i out v in =2.5v, 1ma i out 600ma 0.2 %/a line regulation (v out /v out ) v in 2.5v v in 6v, i out =30ma 0.02 %/v dropout voltage v drop i out =10ma 1000 1300 mv i out =300ma 1000 1300 i out =600ma 1000 1300 quiescent current i q v in =2.5v, i out =0ma 55 80 a standby current i std v in =2.5v, v en in off mode 0.01 1.0 a power supply rejection ratio psrr ripple 0.5vp-p v in =2.5v, i out =100ma f=100hz 65 db f=1khz 65 output voltage temperature coefficient (v out /v out ) t i out =30ma t a =-40c to 85c 100 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise n o load, 10hz f 100khz 50 v rms ven high voltage v ih enable logic high, regulator on 1.5 6.0 v ven low voltage v il enable logic low, regulator off 0 0.4 start-up time t s n o loa d 20 s en pull down resistor r pd 3.0 m vout discharge resistor r dchg set en pin at low 60 thermal shutdown temperature t otsd 160 c thermal shutdown hysteresis t hyotsd 30 thermal resistance (junction to case) jc soic-8 74.6 c /w psop-8 43.7 sot-223 50.9
data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 8 electrical characteristics (continued) ap2111-1.5 electrical ch aracteristic (note 2) v in =2.5v, c in =1.0 f (ceramic), c out =1.0 f (ceramic), typical t a =25c, bold typeface applies over -40c t a 85c ranges, unless otherwis e specified (note 3). note 2: to prevent the short circuit current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25c. over temperature specificatio ns guaranteed by design only. parameter symbol condi tions min typ max unit output voltage v out v in =2.5v, 1ma i out 30ma v out 98.5% 1.5 v out 101.5% v maximum output current i out(max) v in =2.5v, v out =1.478v to 1.523v 600 ma load regulation (v out /v out ) i out v in =2.5v, 1ma i out 600ma 0.2 %/a line regulation (v out /v out ) v in 2.5v v in 6v, i out =30ma 0.02 %/v dropout voltage v drop i out =10ma 700 1000 mv i out =300ma 700 1000 i out =600ma 700 1000 quiescent current i q v in =2.5v, i out =0ma 55 80 a standby current i std v in =2.5v, v en in off mode 0.01 1.0 a power supply rejection ratio psrr ripple 0.5vp-p v in =2.5v, i out =100ma f=100hz 65 db f=1khz 65 output voltage temperature coefficient (v out /v out ) t i out =30ma t a =-40c to 85c 100 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise n o load, 10hz f 100khz 50 v rms ven high voltage v ih enable logic high, regulator on 1.5 6.0 v ven low voltage v il enable logic low, regulator off 0 0.4 start-up time t s n o loa d 20 s en pull down resistor r pd 3.0 m vout discharge resistor r dchg set en pin at low 60 thermal shutdown temperature t otsd 160 c thermal shutdown hysteresis t hyotsd 30 thermal resistance (junction to case) jc soic-8 74.6 c /w psop-8 43.7 sot-223 50.9 sot-23-5 150
data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 9 electrical characteristics (continued) ap2111-1.8 electrical ch aracteristic (note 2) v in =2.8v, c in =1 f (ceramic), c out =1 f (ceramic), typical t a =25c, bold typeface applies over -40c t a 85c ranges, unless otherwise specified (note 3). note 2: to prevent the short circuit current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only. parameter symbol conditi ons min typ max unit output voltage v out v in =2.8v, 1ma i out 30ma v out 98.5% 1.8 v out 101.5% v maximum output current i out(max) v in =2.8v, v out =1.773v to 1.827v 600 ma load regulation (v out /v out ) i out v out =1.8v, v in =v out +1v, 1ma i out 600ma 0.2 %/a line regulation (v out /v out ) v in 2.8v v in 6v, i out =30ma 0.02 %/v dropout voltage v drop i out =10ma 500 700 mv i out =300ma 500 700 i out =600ma 500 700 quiescent current i q v in =2.8v, i out =0ma 55 80 a standby current i std v in =2.8v, v en in off mode 0.01 1.0 a power supply rejectio n ratio psrr ripple 0.5vp-p v in =2.8v, i out =100ma f=100hz 65 db f=1khz 65 output voltage temperature coefficient (v out /v out ) t i out =30ma t a =-40c to 85c 100 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise n o load, 10hz f 100khz 50 v rms ven high voltage v ih enable logic high, regulator on 1.5 6.0 v ven low voltage v il enable logic low, regulator off 0 0.4 start-up time t s n o loa d 20 s en pull down resistor r pd 3.0 m vout discharge resistor r dchg set en pin at low 60 thermal shutdown temperature t otsd 160 c thermal shutdown hysteresis t hyotsd 30 thermal resistance (junction to case) jc soic-8 74.6 c / w psop-8 43.7 sot-223 50.9
data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 10 electrical characteristics (continued) ap2111-2.5 electrical ch aracteristic (note 2) v in =3.5v, c in =1 f (ceramic), c out =1 f (ceramic), typical t a =25c, bold typeface applies over -40c t a 85c ranges, unless otherwise specified (note 3). note 2: to prevent the short circuit current protection f eature from being prematurely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only. parameter symbol conditi ons min typ max unit output voltage v out v in =3.5v, 1ma i out 30ma v out 98.5% 2.5 v out 101.5% v maximum output current i out(max) v in =3.5v, v out =2.463v to 2.537v 600 ma load regulation (v out /v out ) i out v out =2.5v, v in =v out +1v, 1ma i out 600ma 0.2 %/a line regulation (v out /v out ) v in 3.5v v in 6v, i out =30ma 0.02 %/v dropout voltage v drop i out =10ma 5 8 mv i out =300ma 125 200 i out =600ma 250 400 quiescent current i q v in =3.5v, i out =0ma 55 80 a standby current i std v in =3.5v, v en in off mode 0.01 1.0 a power supply rejectio n ratio psrr ripple 0.5vp-p v in =3.5v, i out =100ma f=100hz 65 db f=1khz 65 output voltage temperature coefficient (v out /v out ) t i out =30ma t a =-40c to 85c 100 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise n o load, 10hz f 100khz 50 v rms ven high voltage v ih enable logic high, regulator on 1.5 6.0 v ven low voltage v il enable logic low, regulator off 0 0.4 start-up time t s n o loa d 20 s en pull down resistor r pd 3.0 m vout discharge resistor r dchg set en pin at low 60 thermal shutdown temperature t otsd 160 c thermal shutdown hysteresis t hyotsd 30 thermal resistance (junction to case) jc soic-8 74.6 c /w psop-8 43.7 sot-223 50.9
data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 11 electrical characteristics (continued) ap2111-3.3 electrical ch aracteristic (note 2) v in =4.3v, c in =1 f (ceramic), c out =1 f (ceramic), typical t a =25c, bold typeface applies over -40c t a 85c ranges, unless otherwise specified (note 3). note 2: to prevent the short circuit current protection f eature from being prematurely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only. parameter symbol conditi ons min typ max unit output voltage v out v in =4.3v, 1ma i out 30ma v out 98.5% 3.3 v out 101.5% v maximum output current i out(max) v in =4.3v, v out =3.251v to 3.350v 600 ma load regulation (v out /v out ) i out v in =4.3v, 1ma i out 600ma 0.2 %/a line regulation (v out /v out ) v in 4.3v v in 6v, i out =30ma 0.02 %/v dropout voltage v drop i out =10ma 5 8 mv i out =300ma 125 200 i out =600ma 250 400 quiescent current i q v in =4.3v, i out =0ma 55 80 a standby current i std v in =4.3v, v en in off mode 0.01 1.0 a power supply rejectio n ratio psrr ripple 0.5vp-p v in =4.3v, i out =100ma f=100hz 65 db f=1khz 65 output voltage temperature coefficient (v out /v out ) t i out =30ma t a =-40c to 85c 100 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise n o load, 10hz f 100khz 50 v rms ven high voltage v ih enable logic high, regulator on 1.5 6.0 v ven low voltage v il enable logic low, regulator off 0 0.4 start-up time t s n o loa d 20 s en pull down resistor r pd 3.0 m vout discharge resistor r dchg set en pin at low 60 thermal shutdown temperature t otsd 160 c thermal shutdown hysteresis t hyotsd 30 thermal resistance (junction to case) jc soic-8 74.6 c / w psop-8 43.7 sot-223 50.9
data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 12 electrical characteristics (continued) ap2111-4.8 electrical characteristi c (note 2) (only for sot-223) v in =5.5v, c in =1 f (ceramic), c out =1 f (ceramic), typical t a =25c, bold typeface applies over -40c t a 85c ranges, unless otherwise specified (note 3). note 2: to prevent the short circuit current protection f eature from being prematurely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25 c . over temperature specifications guaranteed by design only. parameter symbol conditi ons min typ max unit output voltage v out v in =5.5v, 1ma i out 30ma v out 98.5% 4.8 v out 101.5% v maximum output current i out(max) v in =5.5v, v out =4.751v to 4.850v 600 ma load regulation (v out /v out ) i out v in =5.5v, 1ma i out 600ma 0.2 %/a line regulation (v out /v out ) v in 5.5v v in 6v, i out =30ma 0.02 %/v dropout voltage v drop i out =10ma 5 8 mv i out =300ma 100 200 i out =600ma 200 400 quiescent current i q v in =5.5v, i out =0ma 55 80 a standby current i std v in =5.5v, v en in off mode 0.01 1.0 a power supply rejectio n ratio psrr ripple 0.5vp-p v in =5.5v, i out =100ma f=100hz 65 db f=1khz 65 output voltage temperature coefficient (v out /v out ) t i out =30ma t a =-40c to 85c 100 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise n o load, 10hz f 100khz 50 v rms thermal shutdown temperature t otsd 160 c thermal shutdown hysteresis t hyotsd 30 thermal resistance (junction to case) jc sot-223 50.9
data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 13 electrical characteristics (continued) ap2111-adj electrical ch aracteristic (note 2) (only for sot-23-5) v in =2.5v, c in =1.0 f (ceramic), c out =1.0 f (ceramic), typical t a =25c, bold typeface applies over -40c t a 85c ranges, unless otherwis e specified (note 3). note 2: to prevent the short circuit current protectio n feature from being premat urely activated, the input voltage must be applied before a current source load is applied. note 3: production testing at t a =25c. over temperature specificatio ns guaranteed by design only. parameter symbol condi tions min typ max unit reference voltage v ref v in =2.5v, 1ma i out 30ma v ref 98.5% 0.8 v ref 101.5% v maximum output current i out(max) v in =2.5v, v ref =0.788v to 0.812v 600 ma load regulation (v out /v out ) i out v in =2.5v, 1ma i out 600ma 0.2 %/a line regulation (v out /v out ) v in 2.5v v in 6v, i out =30ma 0.02 %/v quiescent current i q v in =2.5v, i out =0ma 55 80 a standby current i std v in =2.5v, v en in off mode 0.01 1.0 a power supply rejection ratio psrr ripple 0.5vp-p v in =2.5v, i out =100ma f=100hz 65 db f=1khz 65 output voltage temperature coefficient (v out /v out ) t i out =30ma t a =-40c to 85c 100 ppm/c short current limit i short v out =0v 50 ma rms output noise v noise n o load, 10hz f 100khz 50 v rms ven high voltage v ih enable logic high, regulator on 1.5 6.0 v ven low voltage v il enable logic low, regulator off 0 0.4 start-up time t s n o loa d 20 s en pull down resistor r pd 3.0 m vout discharge resistor r dchg set en pin at low 60 thermal shutdown temperature t otsd 160 c thermal shutdown hysteresis t hyotsd 30 thermal resistance (junction to case) jc sot-23-5 150 c /w
data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 14 typical performance characteristics figure 5. output voltage vs. input voltage figure 6. out put voltage vs. input voltage figure 7. output voltage vs. input voltage fi gure 8. quiescent current vs. temperature 0.00.51.01.52.02.53.03.54.04.55.05.56.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 no load t a =-40 o c t a =25 o c t a =85 o c v out =1.2v output voltage (v) input voltage (v) 0.00.51.01.52.02.53.03.54.04.55.05.56.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 output voltage (v) input voltage (v) t a =-40 o c t a =25 o c t a =85 o c v out =3.3v no load -40-20 0 20406080 46 48 50 52 54 56 58 60 62 64 66 68 70 v in =2.5v no load quiescent current ( a) temperature ( o c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v out =4.8v t a =25 o c output voltage (v) input voltage (v) i out =0ma i out =100ma i out =300ma i out =600ma
data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 15 typical performance characteristics (continued) 1.01.52.02.53.03.54.04.55.05.56.0 0 10 20 30 40 50 60 70 quiescent current ( a) t a =-40 o c t a =25 o c t a =85 o c no load input voltage (v) -40-200 20406080 3.25 3.26 3.27 3.28 3.29 3.30 3.31 3.32 3.33 3.34 3.35 output voltage (v) temperature ( o c) i out =10ma i out =100ma i out =300ma i out =600ma v in =4.3v c in =1 f c out =1 f -40 -20 0 20 40 60 80 1.200 1.202 1.204 1.206 1.208 1.210 i out =300ma i out =600ma i out =10ma i out =100ma v in =2.5v c in =1 f c out =1 f output voltage (v) temperature ( o c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v in =2.5v output voltage (v) output current (a) t a = -40 o c t a =25 o c t a =85 o c figure 11. output voltage vs. temperature figure 12. output voltage vs. output current figure 9. quiescent current vs. input vo ltage figur e 10. output voltage vs. temperature
data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 16 typical performance characteristics (continued) 0.00.10.20.30.40.50.60.70.80.91.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 output voltage (v) output current (a) t a =-40 o c t a = 25 o c t a = 85 o c v in =4.3v 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 output voltage (v) output current (a) v in =4.0v v in =4.3v v in =5.0v v in =5.5v v in =6.0v t a =25 o c c in =1 f c out =1 f 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t a =25 o c c in =1 f c out =1 f v in =5.0v v in =2.0v v in =5.5v v in =6.0v v in =2.5v output voltage (v) output current (a) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v out =4.8v output voltage (v) output current (a) v in =5.0v v in =5.3v v in =5.5v v in =6.0v figure 15. output voltage vs. output current figure 16. output voltage vs. output current figure 13. output voltage vs. output current figure 14. output voltage vs. output current
data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 17 typical performance characteristics (continued) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 50 100 150 200 250 300 350 dropout voltage (mv) output current (a) v out =3.3v t a =-40 o c t a = 25 o c t a = 85 o c 0.0 0.1 0.2 0.3 0.4 0.5 0.6 40 60 80 100 120 140 160 180 200 220 240 260 ground current ( a) output current (a) v in =4.3v t a =-40 o c t a = 25 o c t a = 85 o c 100 1k 10k 100k 30 35 40 45 50 55 60 65 70 v out =1.2v i out =10ma i out =100ma i out =300ma psrr (db) frequency (hz) 20 v in =2.5v ripple=0.5v 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 50 100 150 200 250 300 350 dropout voltage (v) output current (a) t a =-40 o c t a =25 o c t a =85 o c v out =4.8v figure 17. dropout voltage vs. output current figure 18. dropout voltage vs. output current figure 19. ground current vs. output current figure 20. psrr vs. frequency
data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 18 typical performance characteristics (continued) figure 21. load transient figure 22. enable on figure 23. enable off
data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 19 typical application (note 4) note 4: it is recommended to use x7 r or x5r dielectric capacitor if 1.0 f ceramic capacitor is selected as input/output capacitors. figure 24. typical application of ap2111
data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 20 mechanical dimensions soic-8 unit: mm(inch) 0 8 1 5 r 0 . 1 5 0 ( 0 . 0 0 6 ) r0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 7 7 2 0 : 1 d 1.270(0.050) typ 0.190(0.007) 0.250(0.010) 8 d 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 8 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) note: eject hole, oriented hole and mold mark is optional.
data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 21 mechanical dimensions (continued) psop-8 unit: mm(inch) 3.202(0.126) 3.402(0.134)
data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 22 mechanical dimensions (continued) sot-223 unit: mm(inch) 3.300(0.130) 3.700(0.146) 6.700(0.264) 7.300(0.287)
data sheet 600ma cmos ldo regulator with enable ap2111 dec. 2012 rev. 1. 7 bcd semiconductor manufacturing limited 23 mechanical dimensions (continued) sot-23-5 unit: mm(inch) 2.820(0.111) 0 . 0 0 0 ( 0 . 0 0 0 ) 0.300(0.012) 0.950(0.037) 0 . 9 0 0 ( 0 . 0 3 5 ) 0.100(0.004) 0.200(0.008) 8 0 3.020(0.119) 0.400(0.016) 0 . 1 5 0 ( 0 . 0 0 6 ) 1 . 3 0 0 ( 0 . 0 5 1 ) 0.200(0.008) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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